74V1G32 single 2-input or gate preliminary data march 1998 n high speed: t pd = 3.8 ns (typ.) at v cc =5v n low power dissipation: i cc =2 m a (max.) at t a =25 o c n high noise immunity: v nih =v nil = 28% v cc (min.) n power down protection on inputs n symmetrical output impedance: |i oh |=i ol =8 ma(min) n balanced propagation delays: t plh @ t phl n operating voltage range: v cc (opr) = 2v to 5.5v n improved latch-up immunity description the 74V1G32 is an advanced high-speed cmos single 2-input or gate fabricated with sub-micron silicon gate and double-layer metal wiring c 2 mos technology. it has similar high speed performance of equivalent bipolar schottky ttl combined with true cmos low power dissipation. the internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. power down protection is provided on all inputs and 0 to 7v can be accepted on inputs with no regard to the supply voltage. this device can be used to interface 5v to 3v. all inputs and outputs are equipped with protection circuits against static discharge, giving them 2kv esd immunity and transient excess voltage. pin connection and iec logic symbols order codes: 74V1G32s s (sot23-5l) 1/6
input equivalent circuit absolute maximum ratings symbol parameter value unit v cc supply voltage -0.5 to +7.0 v v i dc input voltage -0.5 to +7.0 v v o dc output voltage -0.5 to v cc + 0.5 v i ik dc input diode current - 20 ma i ok dc output diode current 20 ma i o dc output current 25 ma i cc or i gnd dc v cc or ground current 50 ma t stg storage temperature -65 to +150 o c t l lead temperature (10 sec) 260 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these condition is not implied. truth table aby lll lhh hlh hhh pin description pin no symbol name and function 1 1a data input 2 1b data input 4 1y data output 5 gnd ground (0v) 3v cc positive supply voltage recommended operating conditions symbol parameter value unit v cc supply voltage 2.0 to 5.5 v v i input voltage 0 to 5.5 v v o output voltage 0 to v cc v t op operating temperature -40 to +85 o c dt/dv input rise and fall time (see note 1) (v cc =3.3 0.3v) (v cc =5.0 0.5v) 0 to 100 0to20 ns/v ns/v 1) v in from 30% to 70% of v cc 74V1G32 2/6
dc specifications symbol parameter test conditions value unit v cc (v) t a =25 o c-40to85 o c min. typ. max. min. max. v ih high level input voltage 2.0 1.5 1.5 v 3.0 to 5.5 0.7v cc 0.7v cc v il low level input voltage 2.0 0.5 0.5 v 3.0 to 5.5 0.3v cc 0.3v cc v oh high level output voltage 2.0 v i (*) = v ih or v il i o =-50 m a 1.9 2.0 1.9 v 3.0 i o =-50 m a 2.9 3.0 2.9 4.5 i o =-50 m a 4.4 4.5 4.4 3.0 i o =-4 ma 2.58 2.48 4.5 i o =-8 ma 3.94 3.8 v ol low level output voltage 2.0 v i (*) = v ih or v il i o =50 m a 0.0 0.1 0.1 v 3.0 i o =50 m a 0.0 0.1 0.1 4.5 i o =50 m a 0.0 0.1 0.1 3.0 i o =4 ma 0.36 0.44 4.5 i o =8 ma 0.36 0.44 i i input leakage current 0 to 5.5 v i = 5.5v or gnd 0.1 1.0 m a i cc quiescent supply current 5.5 v i =v cc or gnd 1 10 m a (*) all outputs loaded. capacitive characteristics symbol parameter test conditions value unit t a =25 o c-40to85 o c min. typ. max. min. max. c in input capacitance 4 10 10 pf c pd power dissipation capacitance (note 1) 14 pf 1) c pd is defined as the value of the ic's internal equivalent capacitance which is calculated from the operating current consumption without load. (refer t o test circuit). average operating current can be obtained by the following equation. i cc (opr) = c pd ? v cc ? f in +i cc /4 (per gate) ac electrical characteristics (input t r =t f =3 ns) symbol parameter test condition value unit v cc (v) t a =25 o c-40to85 o c min. typ. max. min. max. t plh t phl propagation delay time 3.3 (*) c l = 15 pf 5.5 8.0 1.0 9.5 ns 3.3 (*) c l = 50 pf 8.0 11.5 1.0 13.0 5.0 (**) c l = 15 pf 3.8 5.5 1.0 6.5 5.0 (**) c l = 50 pf 5.3 7.5 1.0 8.5 (*) voltage range is 3.3v 0.3v (**) voltage range is 5v 0.5v 74V1G32 3/6
test circuit c l = 15/50 pf or equivalent (includes jig and probe capacitance) r t =z out of pulse generator (typically 50 w ) waveform: propagation delays (f=1mhz; 50% duty cycle) 74V1G32 4/6
dim. mm mils min. typ. max. min. typ. max. a 0.90 1.45 35.4 57.1 a1 0.00 0.15 0.0 5.9 a2 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 c 0.09 0.20 3.5 7.8 d 2.80 3.00 110.2 118.1 e 2.60 3.00 102.3 118.1 e1 1.50 1.75 59.0 68.8 l 0.35 0.55 13.7 21.6 e 0.95 37.4 e1 1.9 74.8 sot23-5l mechanical data 74V1G32 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1998 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . 74V1G32 6/6
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